一种异靛蓝衍生半导体的合成表征和OTFT应用

Preparation and Properties of an Isoindigo-Derived Semiconductor and OTFT Application

摘要:

以4-癸基十六烷基溴和6 -溴二氢吲哚-2,3-二酮为原料，将4-癸基十六烷基侧链引入到（3E,7E）-3,7-双（2-氧代二氢吲哚-3-亚基）苯并[1,2-b：4,5-b']二呋喃-2,6（3H,7H）-二酮（IBDF）中合成了IBDF-26，其再与（E）-1,2-双（三丁基甲锡烷基）乙烯通过Stille偶合制备了基于异靛蓝衍生大稠环聚合物半导体PIBDFV-26。采用TGA、DSC、UV、CV、XRD、ATM对PIBDFV-26的性能、结构、形貌进行了表征。结果表明，基于异靛蓝大稠环的半导体PIBDFV-26在三氯乙烯（TCE）中的溶解性良好，具有良好的热稳定性，HOMO/ LUMO能级为-5.96 eV /-4.62 eV，光学帯隙为1.34eV。XRD结果表明，聚合物链沿边沿取向形成层状晶体结构，层间距为2.55×10-6 mm，π-π堆积距离为3.46×10-7 mm。AFM显示，退火处理的PIBDFV-26薄膜表面含有纳米级的晶状颗粒。将PIBDFV-26组装有机薄膜晶体管（OTFT）器件进行了测试，结果显示OTFT器件表现出电子传输（negative，n）型沟道的电荷传输特性。150℃退火处理的聚合物薄膜的平均电子迁移率为0.13cm2/V∙s。

Abstract:

4-Decyl-1-hexadecyl side chin is introduced into (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo [1,2-b: 4,5-b']difuran-2,6(3H,7H)-dione(IBDF) with the material 4-Decyl-1-hexadecyl bromide and 6-bromoindoline-2,3-dione, and then Stille couple with (E)-1,2-bis(tributylstannyl)ethene to obtain a poly-mer semiconductor PIBDFV-26 with large fused ring based on isoindigo (IID). The property, structure and morphology of PIBDFV-26 are characterized by TGA, DSC, UV, CV, XRD and ATM. The results show that the semiconductor PIBDFV-26 has good solubility in trichloroethylene (TCE) and good thermal stability. The HOMO/LUMO energy level is -5.66 eV/-4.62 eV and the optical gap is 1.34 eV. XRD results show that the polymer chains are likely packed in a lamellar crystalline structure with an edge-on orientation and the d-spacing and π-π stacking distance are 2.55×10-6 mm and 3.46 ×10-7 mm, respectively. AFM shows that the surface of the annealed PIBDFV-26 film contains nano-crystalline particles. The PIBDFV-26 is assembled into an organic thin film transistor (OTFT) device and tested, and the results show that the OTFT device ex-hibits n-type charge transfer characteristic. The average electron mobility of the polymer film annealed at 150oC is 0.13 cm2/V∙s.