Al掺杂NiCo2S4电极材料的制备及其电化学性能

Preparation of aluminum doped NiCo2S4 electrode materials and its electrochemical properties

摘要:

元素掺杂可以调节电极材料的电子结构，提高材料的电化学活性。以导电碳布为基底，氯化镍、氯化钴为原料，硝酸铝为铝源，通过两步水热法成功在碳布（CC）上生长铝掺杂的NiCo2S4复合电极材料（CC@Al-NiCo2S4）。扫描电子显微镜显示CC@Al-NiCo2S4具有中空纳米管结构，该结构可以提供大量反应活性位点；X射线光电子能谱表征得知Al主要以Al3+的形式存在于CC@NiCo2S4中，可以提高CC@NiCo2S4的导电性。电化学性能测试结果表明，当电流密度为1 A/g时，原始CC@NiCo2S4电极的比电容为844.5 F/g，Al掺杂CC@NiCo2S4的比电容为1515.8 F/g；且在6 A/g的电流密度下经过10000次循环后，CC@Al-NiCo2S4的电容保持率高达87.8%，表明Al掺杂能够显著地提高CC@NiCo2S4的比电容和循环稳定性。

Abstract:

Element doping is known to not only modify the electronic structure but also improve the electrochemical activity of electrode materials. Aluminum-doped NiCo2S4 composite electrode material (CC@Al-NiCo2S4) was successfully grown on carbon cloth(CC) via a two-step hydrothermal method with conductive carbon cloth as substrate, nickel chloride and cobalt chloride as raw material, aluminum nitrate as a aluminum source. Scanning electron microscopy shows that the hollow nanotube structure of CC@Al-NiCo2S4 can provide a large number of reaction sites; X-ray photoelectron spectroscopy shows that aluminum mainly exists in CC@NiCo2S4 in the form of Al3+, which can improve the conductivity of CC@NiCo2S4. Based on the results by the electrochemical performance, the specific capacitance of the original CC@NiCo2S4 electrode is 844.5 F/g at the current density of 1 A/g, and the specific capacitance of Al-doped CC@NiCo2S4 is 1515.8 F/g. After 10000 cycles at a current density of 6 A/g, the capacitance retention rate of CC@Al-NiCo2S4 is as high as 87.8%, indicating that aluminum doping can significantly improve the specific capacitance and cycle stability of CC@NiCo2S4.